ZnO nanobelt/nanowire Schottky diodes formed by dielectrophoresis alignment across au electrodes.

Single nanowire-based UV photodetectors for fast switching

Relatively long (30 µm) high quality ZnO nanowires (NWs) were grown by the vapor-liquid-solid (VLS) technique. Schottky diodes of single NW were fabricated by putting single ZnO NW across Au and Pt electrodes. A device with ohmic contacts at both the sides was also fabricated for comparison. The current-voltage (I-V) measurements for the Schottky diode show clear rectifying behavior and no reve...

The current image of single SnO2 nanobelt nanodevice studied by conductive atomic force microscopy

A single SnO2 nanobelt was assembled on a pair of Au electrodes by electric-field assembly method. The electronic transport property of single SnO2 nanobelt was studied by conductive atomic force microscopy (C-AFM). Back-to-back Schottky barrier-type junctions were created between AFM tip/SnO2 nanobelt/Au electrode which can be concluded from the I-V curve. The current images of single SnO2 nan...

High-yield synthesis of single-crystalline zinc oxide nanobelts and their applications in novel Schottky solar cells.

High-quality ZnO nanobelts were synthesized through introducing an unsteady state in the vapour transport process and their applications in novel Schottky solar cells were demonstrated by contact-printing the ZnO nanobelt network onto a pre-patterned Pt electrode followed by the deposition of a Ti/Au electrode.

Enhanced random lasing from distributed Bragg reflector assisted Au-ZnO nanowire Schottky diode

Tuning of electronic transport characteristics of ZnO micro/nanowire piezotronic Schottky diodes by bending: threshold voltage shift.

We report the longitudinal and transverse PtIr-ZnO wire piezotronic Schottky diodes in a conductive atomic force microscope (C-AFM). The tuning of electronic transport characteristics by bending ZnO wire was investigated. For longitudinal transport, the threshold voltage can be tuned over a wide range (from 1 V to 8 V) during the bending process. For transverse transport, the threshold voltage ...